2sj387(l), 2sj387(s) silicon p-channel mos fet application high speed power switching features low on-resistance low drive current 2.5 v gate drive device can be driven from 3 v source suitable for switching regulator, dc - dc converter outline 1 2 3 1 2 3 4 4 dpak-2 1. gate 2. drain 3. source 4. drain d g s
2sj387(l), 2sj387(s) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss 10 v drain current i d ?0 a drain peak current i d(pulse) * 1 ?0 a body to drain diode reverse drain current i dr ?0 a channel dissipation pch* 2 20 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes: 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c
2sj387(l), 2sj387(s) 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?0 v i d = ?0 ma, v gs = 0 gate to source breakdown voltage v (br)gss 10 v i g = 200 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 6.5 v, v ds = 0 zero gate voltage drain current i dss ?00 m av ds = ?6 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.5 ?.5 v i d = ? ma, v ds = ?0 v static drain to source on state resistance r ds(on) 0.05 0.07 w i d = ? a v gs = ? v* 1 0.07 0.1 w i d = ? a v gs = ?.5 v* 1 forward transfer admittance |y fs | 7 12 s i d = ? a v ds = ?0 v* 1 input capacitance ciss 1170 pf v ds = ?0 v output capacitance coss 860 pf v gs = 0 reverse transfer capacitance crss 310 pf f = 1 mhz turn-on delay time t d(on) 20 ns i d = ? a rise time t r 325 ns v gs = ? v turn-off delay time t d(off) 350 ns r l = 2 w fall time t f 425 ns body to drain diode forward voltage v df ?.0 v i f = ?0 a, v gs = 0 body to drain diode reverse recovery time t rr 240 ns i f = ?0 a, v gs = 0, dif/dt = 20 a/ m s note: 1. pulse test
2sj387(l), 2sj387(s) 4 40 30 20 10 0 channel dissipation pch (w) 50 100 150 200 case temperature tc (?) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area ?00 ?0 ?0 ? ? ?.3 ?.1 ?.5 ? ? ? ?0 ?0 ?0 ta = 25 ? pw = 10 ms (1shot) operation in this area is limited by r ds(on) 1 ms 10 ? 100 ? dc operation (tc = 25 ?) ?0 ?6 ?2 ? ? 0 drain to source voltage v (v) ds drain current i (a) d typical output characteristics ? ? ? ? ?0 v = ?.5 v gs pulse test ?.5 v ? v ?0 v ? v ? v ?0 ? ? ? ? 0 gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics tc = ?5 ? 75 ? 25 ? v = ?0 v pulse test ds ? ? ? ? ?
2sj387(l), 2sj387(s) 5 ?.5 ?.4 ?.3 ?.2 ?.1 0 gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage ? ? ? ? ?0 pulse test d i = ? a ? a ? a drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source on state resistance vs. drain current 1 0.2 0.5 0.1 0.01 0.02 0.05 ?.5 ? ? ? ?0 ?0 ?0 ? v pulse test v = ?.5 v gs 0.2 0.16 0.12 0.08 0.04 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature pulse test ? v d i = ? a ?, ? a gs v = ?.5 v ? a ? a ? a drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current 50 20 10 2 5 1 0.5 ?.1 ?.2 ?.5 ? ? ? ?0 tc = ?5 ? 75 ? 25 ? v = ?0 v pulse test ds
2sj387(l), 2sj387(s) 6 reverse drain current i (a) dr reverse recovery time trr (ns) body to drain diode reverse recovery time ?.1 ?.3 ? ? ?0 ?0 ?00 1000 200 500 100 20 50 10 di / dt = 20 a / s v = 0, ta = 25 c gs 0 ?0 ?0 ?0 ?0 ?0 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage 10000 2000 5000 1000 200 500 100 ciss coss crss v = 0 f = 1 mhz gs 0 ?0 ?0 ?0 ?0 0 gate charge qg (nc) drain to source voltage v (v) ds 0 ? ? ?2 ?6 ?0 ?0 gate to source voltage v (v) gs dynamic input characteristics 20 40 60 80 100 ds v gs v v = ? v ?0 v ?5 v dd d i = ?0 a v dd = ? v ?0 v ?5 v drain current i (a) d switching time t (ns) switching characteristics 1000 200 500 100 20 50 10 ?.1 ?.3 ? ? ?0 ?0 ?00 d(off) t v = ? v, v = ?0 v pw = 5 ?, duty < 1 % gs dd t f r t d(on) t
2sj387(l), 2sj387(s) 7 ?0 ?6 ?2 ? ? 0 source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage ?.4 ?.8 ?.2 ?.6 ?.0 pulse test ? v ? v v = 0, 5 v gs 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch ?c(t) = s (t) ? ch ?c ch ?c = 6.25 ?/w, tc = 25 ? q g q q d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25? normalized transient thermal impedance vs. pulse width
2sj387(l), 2sj387(s) 8 vin monitor d.u.t. vin ? v r l v = ?0 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f switching time test circuit waveforms
hitachi code jedec eiaj weight (reference value) dpak (l)-(2) 0.42 g unit: mm 6.5 0.5 2.3 0.2 0.55 0.1 1.2 0.3 0.55 0.1 5.5 0.5 1.7 0.5 16.2 0.5 4.7 0.5 5.4 0.5 1.15 0.1 2.29 0.5 2.29 0.5 0.8 0.1 0.55 0.1 3.1 0.5 (0.7)
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